SiC materials target rapid thermal processing

17th September 2014
Posted By : Siobhan O'Gorman
SiC materials target rapid thermal processing

Suitable for rapid thermal processing and plasma etch process chamber components, Chemical Vapour Deposition (CVD) SiC and Pyrolytic Boron Nitride (PBN) materials have been introduced by Morgan Advanced Materials. The materials are also suitable as metalorganic CVD tools for high-brightness white LED manufacturing using the indium gallium nitride process. 

With improved growth capability, the SiC materials enable the manufacture of over 300mm diameter components with thicknesses of more than 10mm at production volumes. Morgan has access to ultrasonic machining capability, allowing the company to offer high tolerance CNC machining and precision hard grinding. With this capability, Morgan is also able to offer the patented Rmax process for producing focus CVD SiC ring shapes. 

Due to their high thermal conductivity, resistance to chemical erosion and minimal particulate generation, the SiC materials are suitable for use in chlorine and fluorine plasma etch processes. The materials, which have a purity of 99.999%+, are suitable for use in producing GDMs (gas distribution plates). Here, the SiC material's erosion resistance can lead to long life and extended tool PM schedules. Holes with diameters as small as 0.5mm can be provided by ultrasonic drilling, which is suitable for custom etch applications. 

Featuring high electrical resistivity and high dielectric strength, the PBN materials have a working temperature in excess of 1500°C. The PBN materials, which are low out-gassing, non-wetting, and non-toxic, have high thermal conductivity in the “a” direction and are inert to most acids, alkalis and organic solvents. With a purity of 99.99%+, the PBN materials are suitable for manufacturers of PBN coated graphite heaters and PBN effusion cell components.

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