Suitable for use in semiconductor applications, CVD SiC and PBN materials have been introduced by Morgan Advanced Materials. The applications in which the materials are suitable for include rapid thermal processing and plasma etch process chamber components. The materials can also be used as metalorganic CVD tools for high-brightness white LED manufacturing using the indium gallium nitride process.
Morgan's CVD SiC growth capability has improved, enabling the manufacture of 300+ millimetre diameter components with thicknesses of more than 10mm. By having access to ultrasonic machining capability, Morgan offers high tolerance CNC machining and precision hard grinding. The ultrasonic machining capability also allows the company to produce focus CVD SiC ring shapes through the patented Rmax process.
The high purity (99.999 percent+) SiC material provides high thermal conductivity and resistance to chemical erosion with minimal particulate generation, making it suitable for use in chlorine and fluorine plasma etch processes. When used to produce GDMs, the material's erosion resistance can lead to long life and extended tool PM schedules. For custom etch applications, ultrasonic drilling can provide holes with diameters as small as 0.5mm.
With a working temperature in excess of 1500°C, the high purity (99.99 percent+) PBN materials feature electrical resistivity and high dielectric strength. The materials, which are low out-gassing, non-wetting, and non-toxic, are inert to many acids, alkalis and organic solvents. Providing high thermal conductivity in the 'a' direction, the materials are suitable for manufacturers of PBN coated graphite heaters and PBN effusion cell components.